With the completely newly developed HBPR photoreceiver platform, FEMTO has raised the bar in the field of balanced photoreceivers to a new level.
Two photodiodes connected in anti-parallel subtract ...
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FEATURES
Adjustable transimpedance gain from 10^2 to 10^8 V/A
Wide bandwidth up to 200 MHz
Various Si and InGaAs models cover the 320 to 1700 nm wavelength range
High dynamic ...
FEATURES
Adjustable conversion gain from 10^3 to 10^11 V/W
Operating range from fW to mW
Spectral range from 190 to 1700 nm
NEP down to 6 fW/√Hz
Bandwidth up to ...
FEATURES
Si-PIN and InGaAs-PIN photodiodes
Wavelength range from 320 to 1700 nm
Ultra-wide bandwidth from 10 kHz up to 2 GHz
Max. conversion gain 4.75 x 10^3 V/W
Min. NEP ...
FEATURES
Si PIN and InGaAs PIN photodiodes
Wavelength range from 320 to 1700 nm
Bandwidth DC to 400 MHz
Rise time 1 ns
Max. conversion gain 4.8 x 10^3 V/W
Free ...
FEATURES
Si PIN and InGaAs PIN photodiodes
Wavelength range from 320 to 1700 nm
Bandwidth from DC to 200 MHz
Max. conversion gain 1.9 x 10^4 V/W
Min. NEP ...
FEATURES
Si PIN and InGaAs PIN photodiodes
Wavelength range from 400 to 1700 nm
Bandwidth from DC to 400 kHz
Max. conversion gain 10^7 V/W
Min. NEP 75 fW/√Hz
A NEW ...
FEATURES
Ultra-low noise, NEP ≤ 10 fW/√Hz
Si and InGaAs models cover the wavelength range from 320 to 1700 nm
Bandwidth DC to 2 kHz
Transimpedance gain switchable 10^9 V/A, ...
FEATURES
Ultra-low-noise – NEP 0.7 fW/√Hz
Transimpedance amplifier with high gain up to 10^12 V/A included
Wavelength range from 320 nm to 1700 nm
ULTRA HIGH SENSITIVITY ...
