VIGO Photonics

VIGO Photonics Infrared Detectors: Unique technology for quick and convenient detection of 1–16µm infrared radiation

VIGO Photonics S.A. has developed a unique technology for manufacturing instruments for quick and convenient detection of 1 – 16µm infrared radiation. The instruments operate in ambient temperature or are cooled with simple and inexpensive thermoelectric coolers.

VIGO Photonics Epi-wafers

VIGO manufacture exceptionally high quality III-V epitaxial structures for use in sophisticated electronics such as lasers, photodetectors, transistors, photovoltaic cells and other devices. As one of the few companies on the market, we offer a broad range of high quality epi-wafers, which can be produced both in large volumes as well as in small test batches.

VIGO Photonics Infrared detectors

HgCdTe (MCT) Photoconductive Detectors

Photoconductive detectors based on the photoconductive effect. Infrared radiation generates charge carriers in the semiconductor active region decreasing its resistance. The resistance change is sensed as a current change by applying a constant voltage bias. The devices are characterized by near linear current-voltage characteristics. The electric field in photoconductors is constant across the device. Learn more.

VIGO Photonics Infrared detection modules

VIGO's modules (infrared detectors integrated with electronics) are characterized by high sensitivity in a wide spectral range from 1 to 16 μm, high speed in frequency bands up to 1 GHz, optimized amplification of the measured signal and operating temperatures in the range from 200 to 300 K. Our offer there are ready-made modules for applications such as gas analysis, temperature control in fast-moving objects, laser spectroscopy.

VIGO Photonics Product Development

VIGO have extensive research and development facilities and constantly strive to develop new, unique technologies and products. We are constantly expanding the portfolio of our infrared detectors and modules. 

VIGO Photonics: Application Case Studies for Infrared Detectors

VIGO Photonics offer innovative IR detectors across the 1 - 16µ spectral region, including HgCdTe (MCT) photovoltaic and photoconductive detectors, InAs/InAsSb photovoltaic and superlattice detectors and more.

VIGO Photonics: Application Case Studies for Infrared Detectors

VIGO Photonics offer innovative IR detectors across the 1 - 16µ spectral region, including HgCdTe (MCT) photovoltaic and photoconductive detectors, InAs/InAsSb photovoltaic and superlattice detectors and more.

VIGO Photonics InAs/InAsSb Superlattice Detector: A fast multigas analyser with one IR detector and no liquid nitrogen cooling required

Customers’ demands of wider spectral band absorption detectors in MWIR/LWIR region with competitive parameters to MCT technology encouraged VIGOto develop a novel class of materials & detectors. InAs/InAsSb superlattice (SL) based detectors are our response to fully RoHS compliant product designed for operation with thermoelectric coolers (TEC) at HOT conditions.

VIGO Photonics: Infrared Detectors for Space Applications

VIGO Photonics infrared detectors were selected to be used in NASA’s spectrometer instrument, the Laser Air Monitor System (LAMS) crew habitable environment onboard NASA’s Orion spacecraft.

VIGO Photonics SWIR FPA Butterfly: InGaAs/InP-based uncooled SWIR focal plane array 640×512 format

VIGO Photonics S.A. achieves state of the art performance for the epitaxial InGaAs/InP-based uncooled SWIR focal plane array 640×512 format. FPA’s are developed with VIGO Photonics S.A. 15 μm pixel technology from epitaxy substrate to final encapsulation of detector housing. The SWIR FPA is a cost-effective detection module designed for unique and demanding applications. Small dimensions provide easy mechanical and thermal integration with the target device. Planar sapphire window work with a precisely defined spectral range of IR sourced which has to be detected.

VIGO Photonics: New InGaAs, InAs and InAsSb IR Detectors

VIGO Photonics have released new photovoltaic infrared detectors in which the semiconductor element is made of InGaAs, InAs, InAsSb or superlattice material.